2N6661 Datasheet | Seme LAB

Part: 2N6661
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer: Seme LAB
Size: 75.04 KB

Seme LAB

2N6661

2N6661 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Seme LAB.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET - VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω - Fast Switching - Low Threshold Voltage (Logic Level) - Low CISS - Integral Source-Drain Body Diode - Hermetic Metal TO39 Package - High Reliability Screening Options...

2N6661 Datasheets by Manufacturer

Manufacturer	Part Number	Description
Supertex Inc	2N6661	N-Channel Enhancement-Mode Vertical DMOS FETs
Motorola Semiconductor	2N6661	TMOS SWITCHING FET TRANSISTORS
Vishay	2N6661	N-Channel MOSFET
TT Electronics	2N6661	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
VPT Components	2N6661	N-Channel Power MOSFET